october 2012 ?2012 fairchild semiconductor corporation FDME430NT rev.c1 www.fairchildsemi.com 1 FDME430NT n-channel powertrench ? mosfet FDME430NT n-channel powertrench ? mosfet 30 v, 6 a, 40 m features ? max r ds(on) = 40 m at v gs = 4.5 v, i d = 6 a ? max r ds(on) = 51 m at v gs = 2.5 v, i d = 5 a ? max r ds(on) = 71 m at v gs = 1.8 v, i d = 4 a ? low profile: 0.55 mm maximum in the new package microfet 1.6x1.6 thin ? free from halogenated compounds and antimony oxides ? rohs compliant general description this single n-channel mosf et has been designed using fairchild semiconductor?s advanced powertrench ? process to optimize the r ds(on) @ v gs = 1.8 v on special microfet leadframe. applications ? li-lon battery pack ? baseband switch ? load switch ? dc-dc conversion mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 12 v i d drain current -continuous t a = 25 c (note 1a) 6 a -pulsed 30 p d power dissipation for single operation t a = 25 c (note 1a) 2.1 w power dissipation for single operation t a = 25 c (note 1b) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 60 c/w r ja thermal resistance, junction to ambient (note 1b) 175 device marking device package reel size tape width quantity ya FDME430NT microfet 1.6x1.6 thin 7 ?? 8 mm 5000 units microfet 1.6x1.6 thin g d d top bottom pin 1 d g d s d d s d d
www.fairchildsemi.com 2 FDME430NT rev.c1 FDME430NT n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 22 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 12 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.6 0.8 1.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/c r ds(on) drain to source on resistance v gs = 4.5 v, i d = 6 a 25 40 m v gs = 2.5 v, i d = 5 a 29 51 v gs = 1.8 v, i d = 4 a 38 71 v gs = 4.5 v, i d = 6 a, t j = 125 c 34 54 g fs forward transconductance v ds = 5 v, i d = 6 a 31 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 572 760 pf c oss output capacitance 74 100 pf c rss reverse transfer capacitance 51 75 pf t d(on) turn-on delay time v dd = 15 v, i d = 6 a, v gs = 4.5 v, r gen = 6 714ns t r rise time 310ns t d(off) turn-off delay time 19 34 ns t f fall time 3.3 10 ns q g total gate charge v dd = 15 v, i d = 6 a, v gs = 4.5 v 6.5 9 nc q gs gate to source gate charge 0.9 nc q gd gate to drain ?miller? charge 1.6 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 6 a (note 2) 0.8 1.2 v v gs = 0 v, i s = 1.6 a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 6 a, di/dt = 100 a/ s 12 22 ns q rr reverse recovery charge 2.9 10 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 60 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 175 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
www.fairchildsemi.com 3 FDME430NT rev.c1 FDME430NT n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 10 20 30 v gs = 3 v v gs = 1.8 v v gs = 2.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 1.5 v v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 1 02 03 0 0 1 2 3 v gs = 1.8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 2.5 v v gs = 3 v v gs = 1.5 v v gs = 4.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 6 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.01.52.02.53.03.54.04.5 0 40 80 120 t j = 125 o c i d = 6 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0123 0 10 20 30 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 FDME430NT rev.c1 FDME430NT n-channel powertrench ? mosfet figure 7. 02468 0.0 1.5 3.0 4.5 i d = 6 a v dd = 20 v v dd = 15 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 10 v gate charge characteristics figure 8. 0.1 1 10 30 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 us 10 s curve bent to measured data 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 175 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area figure 10. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 single pulse r t ja = 175 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation figure 11. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 175 o c/w (note 1b) duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 FDME430NT rev.c1 FDME430NT n-channel powertrench ? mosfet dimensional outline and pad layout
FDME430NT n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDME430NT rev.c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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